歡迎光臨~泰州巨納新能源有限公司
語言選擇: 中文版 ∷  英文版

其他二維材料

  • 磷化鍺晶體
  • 磷化鍺晶體
  • 磷化鍺晶體
  • 磷化鍺晶體
磷化鍺晶體磷化鍺晶體磷化鍺晶體磷化鍺晶體

磷化鍺晶體

GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from  (theoretically predicted) 1.68 eV of monolayer to 0.51 eV of bulk. GeP is an anisotropic semiconductor much similar to GaTe monoclinic structure. Our single crystal GeP (Germanium phosphide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any halides. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. Please also see our GeS, GeSe, GeTe, GeAs, GeP, and Ge-based solutions.

Characteristics of vdW GeP crystals

上一個:砷化鍺晶體 下一個:三氧化鉬晶體
用手機掃描二維碼關閉
二維碼
中国体育彩票20选5 3b双彩论坛讨论专区 赛车pk10计划软件 江苏快3技巧稳赚方法 印度股票指数 山西十一选五开奖号 广东快乐十分玩法 全国最大彩票论坛 南粤36选7高手预测号码 互联网金融业务有什么 河南11选五电视走势图 077博彩资讯 秒速飞艇输几百万怎么办 福彩3d试机号技巧 有长期投资价值的股 陕西快乐十分预测号码 重庆快乐十分